PART |
Description |
Maker |
AP2322GN |
Capable of 1.8V gate drive
|
TY Semiconductor Co., Ltd
|
AP2614GY-HF |
Capable of 2.5V Gate Drive, Lower On-resistance
|
Advanced Power Electronics Corp.
|
AP2314GN-HF |
Capable of 2.5V gate drive, Lower on-resistance
|
Advanced Power Electronics Corp.
|
AP9T18GEH AP9T18GEJ |
G-S Diode embedded, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|
AP2323GN-HF |
Capable of 1.8V Gate Drive, Small Package Outline
|
Advanced Power Electronics Corp.
|
AP9923GEO-HF |
Small & Thin Package, Capable of 1.8V Gate Drive
|
Advanced Power Electronics Corp.
|
AP2338GN-HF |
Capable of 1.8V Gate Drive, Small Outline Package
|
Advanced Power Electronics Corp.
|
AP9928GEM |
7.3 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Capable of 2.5V gate drive, Surface mount package
|
Advanced Power Electronics Corp.
|
TLP250F |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation Toshiba Semiconductor
|